Microelectronics

Welcome to the Microelectronics Research Area

The Microelectronics Research Group has made important contributions and gained an international reputation for over 20 years in research into VLSI device quality assessment, nano-size transistors, Flash memory, new materials and device structure, and novel characterization techniques. The group has the state-of-the-art test facilities, is funded by EPSRC and industry, and has collaborated with internationally leading organisations, e.g. IMEC, for 20 years.

In the latest UK's official Research Assessment Exercise (RAE) 2008, 60% of the research have been assessed as either being world-class or internationally excellent. Recently completed grant activity is centred on the research and development of new materials and quality assessment for CMOS and Flash memory industry. Issues addressed include interface state generation, oxide degradation and wear out, mobility evaluation. We have been successful in attracting further EPSRC funding to investigate the use of new high-k materials on Ge and Si in IC fabrication. Collaborators include University of CambridgeUniversity of LiverpoolUniversity of Manchester, Imperial College London, University of Glasgow, International SEMATECH (USA), IMEC (Belgium), NMRC (Ireland), and Università della Calabria (Italy).

Research interests:

High-k gate dielectrics in CMOS and memory process.

Reliability in CMOS and memory devices.

VLSI devices and processing.  

Digital/Analogue/Mixed Signal/RF ASIC design.

Microelectronic technologies.

Image processing.

                Microelectronics Image


Members

  • Full RCEEE Members:
Prof. Jian. F. Zhang (Area leader)
Dr. Weidong Zhang (Reader)
Dr. Zhigang Ji (Lecturer)
Dr. Brahim Benbakhti (Lecturer)
  • Associated RCEEE Members:
Dr. Meng Duan
Mr. Jigang Ma
Mr. Sharifah Fatmadiana
Mr. Colin Robinson


The following is a list of recent additions to our web.

RAE subject success:

  • In the latest UK's official Research Assessment Exercise (RAE) 2008, LJMU is one of the top performing universities in Electrical and Electronic Engineering.
  • 60% of the research in Electrical and Electronic Engineering at LJMU has been assessed as either being world-class (4*) or internationally excellent (3*). 90% of the research was assessed at 2* or above (denoting research of international quality). 
  • Electrical and Electronic Engineering at LJMU  is ranked 13th against all universities, 1st against all post-92 universities. 

Research Grants:

  • Professor J Zhang, Dr. Z Ji and Dr W Zhang have been awarded a four-year research grant of £517,676 from the Engineering and Physical Sciences Research Council (EPSRC) to research the variability in nano-meter devices to help major UK companies including ARM Holdings and Cambridge Silicon Radio (CSR) maintain their world lead in microelectronic circuit design.
  • Two collaboration research agreements worth of 600,000 Euros in total have been officially approved and signed by both LJMU and IMEC’s Business Development Department to study planar/3D Flash memory structures, and resistive RRAM memory devices, respectively. The collaborative research led by Dr. Wei Zhang is carried out between LJMU and the world-leading industrial institute, IMEC, and leading companies including Intel/Micon, Samsung, Hynix, SanDisk, Toshiba.
  • Professor J Zhang and Dr W Zhang have been awarded a three-year research grant of £462,589 from the Engineering and Physical Sciences Research Council (EPSRC) to research High permittivity dielectrics on Ge for end of Roadmap application.
  • A collaboration research agreement worth of 300,000 Euros has been officially approved and signed by both LJMU and IMEC’s Business Development Department to study novel Flash memory structures. Collaborative research led by Dr. Wei Zhang is carried out between LJMU and the world-leading industrial institute, IMEC, and researchers from other leading companies such as Intel and Samsung. 
  • The Engineering and Physical Sciences Research Council (EPSRC) have awarded a three-year research grant of £191K to Professor Jian Zhang for a project, which aims to search for and evaluate new materials for nano-meter transistors.
  • Dr. Weidong Zhang has been awarded a three-year research grant of £123K by the Engineering and Physical Sciences Research Council (EPSRC), which will investigate and evaluate the Stress-Induced-leakage-current (SILC )in gate oxides of MOS devices.

Research Background: 

  • The microelectronics-led revolution drives the development of many everyday electronic products, such as personal computers, mobile phones, and digital cameras.
  • The performance and price of these products depends upon the ability of microchip manufacturers to be able to place more and more devices on a single chip. However, the production of ever-smaller devices presents significant challenges. Unless new materials and devices are found to enable the development of device sizes within the nano-meter range, the microelectronic revolution could end in 5-10 years. The new research will enable us to carry out in-depth investigations in this challenging field.
  • The group has a partnership with leading UK universities, and involves collaboration with world-leading research and industrial organisations both in USA and in Europe. The School of Engineering has strongly supported the development of research in this important area with significant impact on undergraduate and post-graduate programmes.

 



Page last modified 16 October 2013.

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