Prof. J. Zhang's Homepage

Welcome to Prof. J. F. Zhang's Homepage

 

Professor J. F. Zhang BEng, PhD (Liverpool)

 

    Contact:

    518, School of Engineering, Liverpool John Moores University, L3 3AF, UK

    Voice: +44 151 231 2363

    Fax:  +44 151 231 2453

    Email: J.F.ZHANG@LIVJM.AC.UK

    Career Profile

    2001-date       Professor in Microelectronics,  Liverpool JMU.

    1996-2001:     Reader in Microelectronics, Liverpool JMU.

    1992-1996:     Senior Lecturer in Microelectronics,  Liverpool JMU.

    1986-1992:     Research Associate,  Liverpool University.

      Research Profile

      Authored and co-authored more than 60 technical publications.

      Creation of the Microelectronics Research Group.

      Three ESPRC Grants worth £0.5millon.

      Completion of supervision of  4 postdoctoral research projects.

      Completion of supervision of 5 PhD students.

      Completion of more than 40 MSc research project supervision.

      More than 3 PhD researchers under supervision.

      1 postdoctoral research fellows under supervision.

      Collaborative research with many industrial companies and universities.

      Consultancy for industrial organisations.

      Member of the technical program committee for the IEEE Semiconductor Interface Specialists Conference (SISC). 

      Professor Zhang's research has been financially supported by the EPSRC, HEFCE, and several industrial companies.

      Research Interests

      Performance, degradation and defect characterisation of MOS devices and high-k layers.

      VLSI devices and Processing;  ASIC design; Microelectronics; Image processing.

        Course Administration Responsibilities

        Route Leader – MSc Microelectronic System Design.

        Recent Research Projects

        "Performance, degradation and defect structure of MOS devices using high-k materials as gate dielectrics," sponsored by EPSRC

        "Hole Trap Generation and It's Role In Oxide Breakdown", sponsored by EPSRC

        "The Post-Stress Degradation of MOS Devices," sponsored by EPSRC.

        Recent publications 

        A list of recent publications since 2001 in top-quality international journals:

         

        2008

        W. D. Zhang, B. Govoreanu , X. F. Zheng,  D. Ruiz Aguado, M. Rosmeulen, P. Blomme, J. F. Zhang, J. Van Houdt, “Two-pulse C-V: A new method for characterizing electron traps in the bulk of SiO2/high-k dielectric stacks,” IEEE Electron Device Letters, vol.29, no. 9, pp1043-1046, 2008.

        J. F. Zhang, C. Z. Zhao, M. H. Chang, M. B. Zahid, A. R. Peaker, S. Hall, G. Groeseneken, L. Pantisano, S. De Gendt, and M.Heyns, “Impact of different defects on the kinetics of negative bias temperature instability of hafnium stacks,” Applied Physics Letters, 92, Art.no. 013502, 2008.

        C. Z. Zhao, J. F. Zhang, M. H. Chang, A. R. Peaker, S. Hall, G. Groeseneken, L. Pantisano, S. De Gendt, and M. Heyns “Process-induced positive charges in Hf-based gate stacks,” J. Appl. Phys., 103, Art. No. 014507, 2008.

        C. Z. Zhao, J. F. Zhang, M. H. Chang, A. R. Peaker, S. Hall, G. Groeseneken, L. Pantisano, S. De Gendt, and M. Heyns, “Stress-induced positive charge in Hf-based gate dielectrics: impact on device performance and a framework for the defect,” IEEE Trans. Electron Dev.,  vol.55, no.7, pp.1647-1656, 2008.

         

        2007

        Y. Lu, S. Hall, O. Buiu, and J. F. Zhang,“Real-time observation of charging dynamics in hafnium silicate films using MOS capacitance transients,” Microelectronic Eng., Vol.84, pp.2390-2393, 2007.

        E. Efthymiou, S. Bernardini, S. N. Volkos, B. Hamilton, J. F. Zhang, H. J. Uppal, and A. R. Peaker,“Reliability nano-characterization of thin SiO2 and HfSixOy/SiO2 gate stacks,” Microelectronic Eng., Vol.84, pp.2290-2293, 2007.

        M. B. Zahid, R. Degraeve, J. F. Zhang, G. Groeseneken, “Impact of Process Conditions on Interface and High-k Trap Density Investigated by Variable Tcharge-Tdischarge Charge Pumping (VT2CP),” Microelectronic Eng., Vol.84, pp.1951-1955, 2007.

        C. Z. Zhao, J. F. Zhang, M. B. Zahid, E. Efthymiou, Y. Lu, S. Hall, A. R. Peaker, Groeseneken, L. Pantisano, R. Degraeve, S. De Gendt, and M.Heyns,“Hydrogen induced positive charge in Hf-based dielectrics,” Microelectronic Eng., Vol.84, pp.2354-2357, 2007.

        C. Z. Zhao, M. B. Zahid, J. F. Zhang, G. Groeseneken, R. Degraeve, and S. De Gendt, “Threshold voltage instability of p-channel metal-oxide-semiconductor field effect transistors with Hafnium based dielectrics,” Applied Physics Letters, 90, Art.no.143502, 2007

        J. F. Zhang, M. H. Chang, and G. Groeseneken,“Effects of measurement temperature on NBTI,” IEEE Electron Dev.Lett., Vol.28, No.4, pp.298-300, 2007

        M. H. Chang and J. F. Zhang, “On positive charges formed under negative bias temperature stresses,” J.Appl.Phys., 101, Art.no.024516, 2007

         

        2006

        C. Z. Zhao, J. F. Zhang, M. B. Zahid, B. Govoreanu, G. Groeseneken, and S. De Gendt, “Determination of capture cross sections for as-grown electron traps in HfO2/HfSiO stacks,” J. Appl. Phys., 100, Art. No.093716, 2006.

        C. Z. Zhao, J. F. Zhang, M. B. Zahid, G. Groeseneken, R. Degraeve, and S. De Gendt, “Impact of gate materials on positive charge formation in HfO2/SiO2 stacks,” Applied Physics Letters, 89, Art.No. 023507, 2006

        J. F. Zhang, C. Z. Zhao, M. B. Zahid, G. Groeseneken, R. Degraeve, and S. De Gendt, “An assessment of the location of as-grown electron traps in HfO2/HiSiO stacks,” IEEE Electron Dev.Lett., vol.27, no.10, pp.817-820, 2006.

        W. D. Zhang, J. F. Zhang, C. Z. Zhao, M. H. Chang, G. Groeseneken and R. Degraeve, “Electrical signature of the defect associated with gate oxide breakdown,” IEEE Electron Dev.Lett., vol.27, no.5, pp.393-395, 2006.

        M. H. Chang, J. F. Zhang, and W. D. Zhang, “Assessment of capture cross sections and effective density of electron traps generated in silicon dioxides”, IEEE Trans. Electron Dev.,  vol.53, no.6, pp.1347-1354, 2006.

         

        2005

        C. Z. Zhao, M. B. Zahid, J. F. Zhang, G. Groeseneken, R. Degraeve, and S. De Gendt, “Properties and dynamic behavior of electron traps in HfO2/SiO2 stacks,” Microelectronic Engineering, vol.80, pp.366-369, 2005.

        Y. G. Wang, M. Z. Xu, C. H. Tan,  J. F. Zhang, X. R. Duan, “The conduction mechanism of stress induced leakage current through ultra-thin gate oxide under constant voltage stresses,” Chinese Physics, vol.14, pp.1886-1891, 2005

        C. Z. Zhao and J. F. Zhang, “Effects of hydrogen on positive charges in gate oxides,” J.Appl.Phys. 97 art. no. 073703, 2005.

         

        2004

        M. H. Chang and J. F. Zhang, “On the role of hydrogen in hole-induced electron trap creation,” Semiconductor Sci. and Technology, vol.19, pp.1333-1338, 2004.

        C. Z. Zhao, J. F. Zhang, G. Groeseneken and R. Degraeve, “Hole traps in silicon dioxides --- Part II: Generation mechanism,” IEEE Trans. Electron Dev.,  vol.51, no.8, pp.1274-1280, 2004.

        J. F. Zhang, C. Z. Zhao, A. H. Chen, G. Groeseneken and R. Degraeve, “Hole traps in silicon dioxides --- Part I: Properties,” IEEE Trans. Electron Dev.,  vol.51, no.8, pp.1267-1273, 2004.

        J. F. Zhang, H. K. Sii, A. H. Chen, C. Z. Zhao, M. J. Uren, G. Groeseneken and R. Degraeve, “Hole trap generation in gate dielectric during substrate hole injection,” Semiconductor Sci. and Technology,  vol.19, no.1, pp.L1-L3, 2004.

         

        2003

        J. F. Zhang, C. Z. Zhao, G. Groeseneken, and R. Degraeve, “Analysis of the kinetics for interface state generation following hole injection,” J.Appl.Phys., vol.93, no.10, pp.6107-6116, 2003

        W. D. Zhang, J. F. Zhang, M. J. Lalor, D. R. Burton, G. Groeseneken and R. Degraeve, “Effects of detrapping on electron traps generated in gate oxides,” Semiconductor Sci. and Technology, vol.18, 174-182, 2003


        2002

        W. D. Zhang, J. F. Zhang, M. Lalor, D. Burton, G. Groeseneken, and R. Degraeve, “Two types of neutral electron traps generated in the gate silicon dioxide,” IEEE Trans. Electron Dev., vol.49, no.11, 1868-1875, 2002

        J. F. Zhang, C. Z. Zhao, G. Groeseneken, R. Degraeve, J. N. Ellis, and C. D. Beech, “Relation between hole traps and hydrogenous species in silicon dioxides,” Solid-State Electronics, vol.46, no.11, 1839-1847, 2002

         

        2001

        J. F. Zhang, C. Z. Zhao, G. Groeseneken, R. Degraeve, J. N. Ellis, and C. D. Beech, “Relation between hole traps and non-reactive hydrogen induced positive charges,” Microelectronic Eng., vol.59, no.1, pp.67-72, 2001

        W. D. Zhang, J. F. Zhang, M. J. Uren, G. Groeseneken, R. Degraeve, M. Lalor and D. Burton, “Dependence of energy distributions of interface states on stress conditions”, Microelectronic Eng., vol.59, no.1, pp.95-99, 2001

        W. D. Zhang, J. F. Zhang, M. Lalor, D. Burton, G. Groeseneken, and R. Degraeve, “On the mechanism of electron trap generation in gate oxides,” Microelectronic Eng., vol.59, no.1, pp.89-94, 2001

        W. D. Zhang, J. F. Zhang, M. J. Uren, G. Groeseneken, R. Degraeve, M. Lalor, and D. Burton, “On the interface states generated under different stress conditions” Appl.Phys.Lett., vol.79, no.19, 3092-3094, 2001

        J. F. Zhang, C. Z. Zhao, G. Groeseneken, R. Degraeve, J. N. Ellis, and C. D. Beech, “Hydrogen induced positive charge generation in gate oxides”, J.Appl.Phys., vol.90, no.4, pp.1911-1919, 2001

        J. F. Zhang, H. K. Sii, G. Groeseneken, and R. Degraeve, “Hole trapping and trap generation in the gate silicon dioxide”, IEEE Trans. Electron Dev., vol.48, no.6, pp.1127-1135, 2001

        C. Z. Zhao, J. F. Zhang, G. Groeseneken, R. Degraeve, J. N. Ellis, and C. D. Beech, “Mobile protons in the gate oxide and their potentials and problems in application for non-volatile memory devices”, IEE Electronics Letters, vol.37, no.11, pp.716-717, 2001

        C. Z. Zhao, J. F. Zhang, G. Groeseneken, R. Degraeve, J. N. Ellis, and C. D. Beech, “Interface state generation post-hole injection”, J.Appl.Phys., vol.90, no.1, pp.328-336, 2001

         

         

        Click here for a full list of publications

         

         

        Consultancy

         

        IMEC, Delphi, IR International



        Page last modified by Wei Zhang on 03 March 2011.
         
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